One-dimensional electron gas in strained lateral heterostructures of single layer materials

摘要

Confinement of the electron gas along one of the spatial directions opens anavenue for studying fundamentals of quantum transport along the side ofnumerous practical electronic applications, with high-electron-mobilitytransistors being a prominent example. A heterojunction of two materials withdissimilar electronic polarisation can be used for engineering of theconducting channel. Extension of this concept to single-layer materials leadsto one-dimensional electron gas (1DEG). MoS2/WS2 lateral heterostructure isused as a prototype for the realisation of 1DEG. The electronic polarisationdiscontinuity is achieved by straining the heterojunction taking advantage ofdissimilarities in the piezoelectric coupling between MoS2 and WS2. A completetheory that describes an induced electric field profile in lateralheterojunctions of two-dimensional materials is proposed and verified by firstprinciple calculations.